1 tm file number 9037 is-2100arh radiation hardened high frequency half bridge driver the radiation hardened is-2100arh is a high frequency, 150v half bridge n-channel mosfet driver ic, which is a functional, pin-to-pin replacement for industry standard 2110 types. the low-side and high-side gate drivers are independently controlled. this gives the user maximum flexibility in dead-time selection and driver protocol. in addition, the device has on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the hin signal. if they disagree, a set or reset pulse is generated to correct the high-side latch. this feature protects the high-side latch from single event upsets (seus). undervoltage on the high-side supply forces ho low. when that supply returns to a valid voltage, ho will go to the state of hin. undervoltage on the low-side supply forces both lo and ho low. when that supply becomes valid, lo returns to the lin state and ho returns to the hin state. specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for the is-2100arh are contained in smd 5962-99536. features ? electrically screened to dscc smd # 5962-99536 qml qualified per mil-prf-38535 requirements radiation environment - maximumtotaldose ................. 300krad(si) - di rsg process provides latch-up immunity - seurating...................... 82mev/mg/cm 2 - vertical device architecture provides improved low dose rate immunity bootstrap supply max voltage to 170v drives 1000pf load at 1mhz with rise and fall times of 30ns (typ) 1.5a (typ) peak output current independent inputs for non-half bridge topologies lowdcpowerconsumption.............60mw(typ) operates with v dd =v cc over 12v to 20v range supply undervoltage protection applications high frequency switch-mode power supplies drivers for inductive loads dc motor drivers pinout is-2100arh flatpack (cdfp4-f16) top view ordering information ordering number intersil mkt. number temp. range ( o c) 5962f9953602vxc is9-2100arh-q -55 to 125 5962f9953602qxc is9-2100arh-8 -55 to 125 is9-2100arh/proto is9-2100arh/proto -55 to 125 lo com v cc nc nc vs vb ho 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 nc v ss lin sd hin v dd nc nc data sheet september 2001 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil americas inc. copyright ? intersil americas inc. 2001, all rights reserved
2 all intersil products are manufactured, assembled and tested utilizing iso9000 quality systems. intersil corporation?s quality certifications can be viewed at www.intersil.com/design/quality intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or specifications at a ny time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to b e accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third partie s which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com die characteristics die dimensions: 4820 m x 3300 m (190 mils x 130 mils) thickness: 483 m 25.4 m(19mils 1 mil) interface materials: glassivation: type: psg (phosphorous silicon glass) thickness: 8.0k ? 1.0k ? top metallization: type: alsicu thickness: 16.0k ? 2k ? substrate: radiation hardened silicon gate, dielectric isolation backside finish: silicon assembly related information: substrate potential: unbiased (di) additional information: worst case current density: <2.0 x 10 5 a/cm 2 transistor count: 542 metallization mask layout is-2100arh sd (13) lin (14) v ss (15) com (2) v cc (3) hin (12) v dd (11) ho (8) vb (7) vs (6) lo (1) is-2100arh
is-2100arh printer friendly version rad-hard high f requency half bridge driver datasheets, related docs & simulations description key features parametric data application diagrams related devices ordering information part no. design- in status temp. package msl smd price us $ is0-2100arh- q active mil 16 ld die (military visual) n/a 5962f9953602vxc contact us is9-2100arh- 8 active mil 16 ld flatpack n/a 5962f9953602qxc contact us is9-2100arh- q active mil 16 ld flatpack n/a 5962f9953602vxc contact us the price listed is the manufacturer's suggested retail price for quantities between 100 and 999 units. however, prices in today's market are fluid and may change without notice. msl = moisture sensitivity level - per ipc/jedec j-std-020 smd = standard microcircuit drawing description the radiation hardened is-2100arh is a high frequency, 130v half bridge n-channel mosfet driver ic, which is functionally similar to industry standard 2110 types. the lowside and high-side gate drivers are independently controlled. this gives the user maximum flexibility in dead-time selection and driver protocol. in addition, the device has on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the hin signal. if they disagree, a set or reset pulse is generated to correct the high-side latch. this feature protects the high-side latch from single event upsets (seus). specifications for rad hard qml devices are controlled by the defense supply center in columbus (dscc). the smd numbers listed here must be used when ordering. detailed electrical specifications for the is-2100arh are contained in smd 5962-99536. a ?hotlink? is provided on our website for downloading. key f eatures electrically screened to dscc smd # 5962-99536 qml qualified per mil-prf-38535 requirements radiation environment maximum total dose 300krad(si) di rsg process provides latch-up immunity seu rating 82mev/mg/cm2 vertical device architecture reduces sensitivity to low dose rates bootstrap supply max voltage to 150v drives 1000pf load at 1mhz with rise and fall times of 30ns (typ) 1.5a (typ) peak output current independent inputs for non-half bridge topologies low dc power consumption 60mw (typ) operates with vdd = vcc over 12v to 20v range low-side supply undervoltage protection related documentation
datasheet(s): radiation hardened high frequency half bridge driver military smd(s): radiation hardened high frequency half bridge driver technical homepage: military/space ics other: single event effects testing of the is-2100arh half bridge mosfet driver parametric data rh level 300 application block diagrams satellite power management applications high frequency switch-mode power supplies drivers for inductive loads dc motor drivers about us | careers | contact us | investors | legal | privacy | site map | subscribe | intranet ?2007. all rights reserved.
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